Search for midgap levels in 3C-SiC grown on Si substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 10 A, 1999, Pages

  Yamada, Noboru ^a   Kato, Masashi ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a   Tokuda, Yutaka ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

CONSTANT-VOLTAGE-CAPACITANCE TRANSIENT SPECTROSCOPY (CVCTS);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033320816     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1094     Document Type: Article

References (9)