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Volumn 353-356, Issue , 2001, Pages 475-478
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Tantalum and tungsten in silicon carbide: identification and polytype dependence of deep levels
a b a c a |
Author keywords
[No Author keywords available]
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Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRON ENERGY LEVELS;
ENERGY GAP;
RADIOACTIVE TRACERS;
RADIOISOTOPES;
TANTALUM;
TUNGSTEN;
BAND GAP STATES;
BAND OFFSET;
CHEMICAL IDENTIFICATION;
LEVEL SPLITTING;
POLYTYPE;
POLYTYPE DEPENDENCE;
RULE OF LANGER-HEINRICH;
SILICON CARBIDE;
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EID: 0035119596
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.475 Document Type: Article |
Times cited : (6)
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References (13)
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