Thermal stability of sheet resistance in AlGaN/GaN 2DEG structure

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 397-400

  Shiojima, K ^a   Shigekawa, N ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; ANNEALING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; SEMICONDUCTOR ALLOYS; SHEET RESISTANCE; THERMODYNAMIC STABILITY; THICKNESS MEASUREMENT; TWO DIMENSIONAL ELECTRON GAS; WIDE BAND GAP SEMICONDUCTORS;

ALGAN LAYERS; ALGAN/GAN; CRYSTAL QUALITIES; LOW QUALITIES; REFLECTIVITY SPECTRA; RESISTANCE INCREASE; TOP SURFACE;

GALLIUM ALLOYS;

EID: 3042514462     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390071     Document Type: Conference Paper

References (6)

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