High speed high power AlGaN/GaN heterostructure field effect transistors with improved Ohmic contacts

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1997, Pages 399-406

  Chu, Kenneth K ^a   Murphy, Michael J ^a   Burm, Jinwook ^a   Schaff, William J ^a   Eastman, Lester F ^a   Botchkarev, Andrei ^a   Tang, Haipeng ^a   Morkoc, Hadis ^a  

^a Cornell Univ ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GOLD; MOLECULAR BEAM EPITAXY; NITRIDES; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TITANIUM; TRANSCONDUCTANCE;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0031386906     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cornel.1997.649381     Document Type: Conference Paper

References (10)