Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Desmaris, Vincent ^a   Shiu, Jin Yu ^a,b   Lu, Chung Yu ^b   Rorsman, Niklas ^a   Zirath, Herbert ^a   Chang, Edward Yi ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ENERGY DISPERSIVE SPECTROSCOPY; METALLIZING; MICROSTRUCTURE; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

ALLOYED CONTACTS; CONTACT RESISTANCE; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; GOLD (AU)-BASED SILICIDES;

HETEROJUNCTIONS;

EID: 33747364177     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218262     Document Type: Article

References (29)

1. Y. F. Wu et al., IEEE Electron Device Lett. 25, 117 (2004).
2. T. Inoue, Y. Ando, H. Miyamoto, T. Nakayama, Y. Okamoto, K. Hataya, and M. Kuzuhara, IEEE MTT-S Int. Microwave Symp. Dig. 3, 1649 (2004).
3. A. Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, and U. K. Mishra, Electron. Lett. 40, 73 (2004).
4. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, and I. Adesida, IEEE Electron Device Lett. 23, 455 (2002).
5. P. Neudeck, R. S. Okojie, and L. Y. Chen, Proc. IEEE 90, 1065 (2002).
6. S. J. Pearton, F. Ren, A. P. Zhang, and K. P. Lee, Mater. Sci. Eng., R. R30, 55 (2000).
7. R. J. Trew, G. L. Bilbro, W. Kuang, Y. Liu, and H. Yin, IEEE Microw. Mag. 6, 56 (2005).
8. B. Jacobs, M. C. J. C. M. Kramer, E. J. Geluk, and F. Karouta, J. Cryst. Growth 241, 15 (2002).
9. W. Lu, V. Kumar, E. L. Piner, and I. Adesida, IEEE Trans. Electron Devices 50, 1069 (2003).
10. M. W. Fay et al., Mater. Res. Soc. Symp. Proc. 743, 801 (2002).
11. S. J. Cai, R. Li, Y. L. Chen, L. Wong, W. G. Wu, S. G. Thomas, and K. L. Wang, Electron. Lett. 34, 2354 (1998).
12. C. Youn and K. Kang, Jpn. J. Appl. Phys., Part 1 39, 3955 (2000).
13. D. Selvanathan, L. Zhou, V. Kumar, and I. Adesida, Phys. Status Solidi A 194, 583 (2002).
14. V. Desmaris, J. Eriksson, N. Rorsman, and H. Zirath, Electrochem. Solid-State Lett. 7, G72 (2004).
15. C. H. Chen, S. Keller, G. Parish, R. Vetury, P. Kozodoy, E. L. Hu, S. P. Denbaars, and U. K. Mishra, Appl. Phys. Lett. 73, 3147 (1998).
16. D. Qiao, Z. F. Guan, J. Carlton, S. S. Lau, and G. J. Sullivan, Appl. Phys. Lett. 74, 2652 (1999).
17. D. Buttari et al., IEEE Electron Device Lett. 23, 76 (2002).
18. G. H. Jessen et al., Solid-State Electron. 46, 1427 (2002).
19. Q. Z. Liu, L. S. Yu, F. Deng, S. S. Lau, Q. Chen, J. W. Yang, and M. A. Khan, Appl. Phys. Lett. 71, 1658 (1997).
20. F. M. Mohammed, L. Wang, H. J. Koo, and I. Adesida, Electron. Lett. 41, 984 (2005).
21. G. Reeves and H. B. Harrison, IEEE Electron Device Lett. EDL-3, 111 (1982).
22. A. N. Bright, P. J. Thomas, M. Weyland, D. M. Tricker, C. J. Hemphreys, and R. Davis, J. Appl. Phys. 83, 3143 (2001).
23. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. Morkoc, Appl. Phys. Lett. 64, 1003 (1994).
24. S. Miller and P. H. Holloway, J. Electron. Mater. 25, 1709 (1996).
25. D. Qiao et al., J. Appl. Phys. 89, 5543 (2001).
26. M. W. Fay, G. Moldovan, P. D. Brown, I. Harrison, J. C. Birbeck, B. T. Hughes, M. J. Uren, and T. Martin, J. Appl. Phys. 92, 94 (2002).
27. S. Murai, H. Masuda, Y. Koide, and M. Murakami, Appl. Phys. Lett. 80, 2934 (2002).
28. S. Ruvimov et al., Appl. Phys. Lett. 69, 1556 (1996).
29. L. Wang, F. M. Mohammad, and I. Adesida, J. Appl. Phys. 98, 106105 (2005).