Mo/Al/Mo/Au Ohmic contact scheme for Al xGa 1-xN/GaN high electron mobility transistors annealed at 500 °C

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 2, 2006, Pages

  Basu, A ^a   Mohammed, F M ^a   Guo, S ^b   Peres, B ^b   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; CONTACT RESISTIVITY;

ALUMINUM; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; GOLD; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; MOLYBDENUM;

OHMIC CONTACTS;

EID: 33645508877     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2178365     Document Type: Article

References (8)

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