Pull-in and release voltage design for nanoelectromechanical field-effect transistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 12, 2009, Pages 3072-3082

  Kam, Hei ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Mechanical switch; MEMS; Nanoelectromechanical field effect transistor (NEMFET); Subthreshold swing; Suspended gate FET

Indexed keywords

BODY DOPING; EULER-BERNOULLI BEAM EQUATION; GAP THICKNESS; GATE ELECTRODES; GATE WORK FUNCTION; MECHANICAL SWITCH; NANO-ELECTROMECHANICAL; PULL-IN; SUBTHRESHOLD SWING; SURFACE FORCES; SUSPENDED-GATE FET; SWITCHING BEHAVIORS; TRANSISTOR DESIGNS; TRANSISTOR OPERATION; VOLTAGE MODEL;

ANALOG CIRCUITS; MEMS; POISSON EQUATION; SEMICONDUCTOR DOPING; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79953753343     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032617     Document Type: Article

References (23)

1. A. M. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M. J. Declerq, P. Renaud, C. Hibert, P. Fluckiger, and G. A. Racine, "Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG-MOSFET) with a metal over-gate architecture," in Proc. ISQED, 2002, pp. 496-501.
2. H. Kam, D. T. Lee, R. T. Howe, and T.-J. King, "A new nanoelectromechanical field effect transistor (NEMFET) design for low-power electronics," in IEDM Tech. Dig., 2005, pp. 463-466.
3. K. Akarvardar, C. Eggimann, D. Tsamados, Y. S. Chauhan, G. C. Wan, A. M. Ionescu, R. T. Howe, and H.-S. P. Wong, "Analytical modeling of the suspended-gate FET and design insights for low-power logic," IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 48-59, Jan. 2008.
4. N. Abele, R. Fritschi, K. Boucart, F. Casset, P. Ancey, and A. M. Ionescu, "Suspended-gate MOSFET: Bringing new MEMS functionality into solid-state MOS transistor," in IEDM Tech. Dig., 2005, pp. 479-481.
5. N. Abele, A. Villaret, A. Gangadharaiah, C. Gabioud, P. Ancey, and A. M. Ionescu, "1T MEMS memory based on suspended gate MOSFET," in IEDM Tech. Dig., 2006, pp. 509-512.
6. Y. S. Chauhan, D. Tsamados, N. Abelé, C. Eggimann, M. Declercq, and A. M. Ionescu, "Compact modeling of suspended gate FET," in Proc. IEEE Int. Conf. VLSI Des., 2008, pp. 119-124.
7. D. Tsamados, Y. S. Chauhan, C. Eggimann, K. Akarvardar, H.-S. P.Wong, and A. M. Ionescu, "Finite element analysis and analytical simulations of suspended gate-FET for ultra-low power inverters," Solid State Electron., vol. 52, no. 9, pp. 1374-1381, Sep. 2008.
8. H. C. Nathanson, W. E. Newell, R. A. Wickstrom, and J. R. Davis, "The resonant gate transistor," IEEE Trans. Electron Devices, vol. ED-14, no. 3, pp. 117-133, Mar. 1967.
9. N. Abele, V. Pott, K. Boucart, F. Casset, K. Segueni, P. Ancey, and A. M. Ionescu, "Comparison of RSG-MOSFET and capacitive MEMS resonator detection," Electron. Lett., vol. 41, no. 5, pp. 242-244, Mar. 2005.
10. D. Grogg, D. Tsamados, N.-D. Badila, and A. M. Ionescu, "Integration of MOSFET transistors in MEMS resonators for improved output detection," in Proc. 18th Int. Solid-State Sens. Actuators Conf. Tech. Dig., Lyon, France, Jun. 10-14, 2007, pp. 1709-1712.
11. E. S. Hung and S. D. Senturia, "Generating efficient dynamical models formicroelectromechanical systems from a few finite-element simulations runs," J. Microelectromech. Syst., vol. 8, no. 3, pp. 280-289, Sep. 1999.
12. J. A. Pelesko and D. H. Bernstein, Modeling MEMS and NEMS. Boca Raton, FL: CRC Press, 2003.
13. P. M. Zavracky, S. Majumder, and N. E. McGruer, "Micromechanical switches fabricated using nickel surface micromachining," J. Microelectromech. Syst., vol. 6, no. 1, pp. 3-9, Mar. 1997.
14. K. Wang, A.-C. Wong, and C. T.-C. Nguyen, "VHF free-free beam high-Q micromechanical resonators," J. Microelectromech. Syst., vol. 9, no. 3, pp. 347-360, Sep. 2000.
15. J. A. Knapp and M. P. de Boer, "Mechanics of microcantilever beams subject to combined electrostatic and adhesive forces," J. Microelectromech. Syst., vol. 11, no. 6, pp. 754-764, Dec. 2002.
16. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. New York: McGraw-Hill, 1999.
17. S. P. Timoshenko and J.M. Gere, Mechanics of Materials. Pacific Grove, CA: Brooks/Cole, 2001.
18. J. I. Seeger and S. B. Crary, "Stabilization of electrostatically actuated mechanical devices," in Proc. Int. Conf. Solid-State Sens. Actuators, 1997, pp. 1133-1136.
19. Q. Lu, Y.-C. Yeo, P. Ranade, H. Takeuchi, T.-J. King, C. Hu, S. C. Song, H. F. Luan, and D.-L. Kwong, "Dual-metal gate technology for deepsubmicron CMOS transistors," in VLSI Symp. Tech. Dig., 2000, pp. 72-73.
20. T. J. King, J. R. Pfiester, J. D. Shott, J. P. McVittie, and K. C. Saraswat, "Polycrystalline-Si1-xGex-gate CMOS technology," in IEDM Tech. Dig., 1990, pp. 253-256.
21. S. Gorthi, A. Mohanty, and A. Chatterjee, "Cantilever beam electrostatic MEMS actuators beyond pull-in," J. Micromech. Microeng., vol. 16, no. 9, pp. 1800-1810, Sep. 2006.
22. P. M. Osterberg and S. D. Senturia, "M-TEST: A test chip for MEMS material property measurement using electrostatically actuated test structures," J. Microelectromech. Syst., vol. 6, no. 2, pp. 107-118, Jun. 1997.
23. Y. Xie, S.-S. Li, Y.-W. Lin, Z. Ren, and C. T.-C. Nguyen, "UHF micromechanical extensional wine-glass-mode ring resonators," in IEDM Tech. Dig., Washington, DC, 2003, pp. 953-956.