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1
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79952516708
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Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG-MOSFET) with a metal-over-gate architecture
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A. Ionescu, V. Pott, R. Fritschi, K. Banerjee, M. J. Declercq, P. Renaud, C. Hibert, P. Fluckiger, and G. Racine, "Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG-MOSFET) with a metal-over-gate architecture," in IEEE International Symposium on Quality Electronic Design, 2002, pp. 496- 501.
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IEEE International Symposium on Quality Electronic Design
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Ionescu, A.1
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Fluckiger, P.8
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2
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33847733083
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Suspended-gate MOSFET: Bringing new MEMS functionality into solid-state MOS transistor
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Dec
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N. Abelé, R. Fritschi, K. Boucart, F. Casset, P. Ancey, and A. M. Ionescu, "Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor," in IEEE International Electron Devices Meeting, Dec. 2005, pp. 479-481.
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(2005)
IEEE International Electron Devices Meeting
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Abelé, N.1
Fritschi, R.2
Boucart, K.3
Casset, F.4
Ancey, P.5
Ionescu, A.M.6
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3
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33847746657
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A new nanoelectro- mechanical field effect transistor (NEMFET) design for low-power electronics
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Dec
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H. Kam, D. Lee, R. Howe, and T-J. King, "A new nanoelectro- mechanical field effect transistor (NEMFET) design for low-power electronics," in IEEE International Electron Devices Meeting, Dec. 2005, pp. 463-466.
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IEEE International Electron Devices Meeting
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Kam, H.1
Lee, D.2
Howe, R.3
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33747844276
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Sensing sensibility of surface micromachined suspended gate polysilicon thin film transistors
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Oct
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H. Mahfoz-Kotb, A. Salaun, F. Bendriaa, F. L. Bihan, T. Mohammed-Brahim, and J. Morante, "Sensing sensibility of surface micromachined suspended gate polysilicon thin film transistors," Sensors and Actuators B: Chemical, vol. 118, no. 1-2, pp. 243-248, Oct. 2006.
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Sensors and Actuators B: Chemical
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Mahfoz-Kotb, H.1
Salaun, A.2
Bendriaa, F.3
Bihan, F.L.4
Mohammed-Brahim, T.5
Morante, J.6
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5
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33845576089
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Principles of space-charge based bi-stable MEMS: The junction-MEMS
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January
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J.-M. Sallese and D. Bouvet, "Principles of space-charge based bi-stable MEMS: The junction-MEMS," Sensors and Actuators A: Physical, vol. 133, no. 1, pp. 173-179, January 2007.
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Sensors and Actuators A: Physical
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Sallese, J.-M.1
Bouvet, D.2
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6
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46049091018
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IT MEMS memory based on suspended gate MOSFET
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Dec
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N. Abele, A. Villaret, A. Gangadharaiah, C. Gabioud, P. Ancey, and A. M. Ionescu, "IT MEMS memory based on suspended gate MOSFET," in IEEE International Electron Devices Meeting, Dec. 2006, pp. 509-512.
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IEEE International Electron Devices Meeting
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Abele, N.1
Villaret, A.2
Gangadharaiah, A.3
Gabioud, C.4
Ancey, P.5
Ionescu, A.M.6
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7
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34247859035
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Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory
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May
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T. Nagami, H. Mizuta, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, and S. Oda, "Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory," IEEE Transactions on Electron Devices, vol. 54, no. 5, pp. 1132-1139, May 2007.
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IEEE Transactions on Electron Devices
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Nagami, T.1
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Saito, S.5
Arai, T.6
Shimada, T.7
Oda, S.8
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8
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33947248679
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3-d design and analysis of functional nems-gate mosfets and sets
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March
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B. Pruvost, H. Mizuta, and S. Oda, "3-d design and analysis of functional nems-gate mosfets and sets," IEEE Transactions on Nanotechnology, vol. 6, no. 2, pp. 218-224, March 2007.
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IEEE Transactions on Nanotechnology
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Pruvost, B.1
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Numerical and analytical simulations of Suspended-Gate FET for ultra-low power inverters
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Sept
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D. Tsamados, Y. S. Chauhan, C. Eggimann, K. Akarvardar, H. P. Wong, and A. M. Ionescu, "Numerical and analytical simulations of Suspended-Gate FET for ultra-low power inverters," in accepted in IEEE European Solid-State Device Research Conference (ESSDERC), Sept. 2007.
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(2007)
accepted in IEEE European Solid-State Device Research Conference (ESSDERC)
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Tsamados, D.1
Chauhan, Y.S.2
Eggimann, C.3
Akarvardar, K.4
Wong, H.P.5
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10
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34249885598
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Compact Modeling of Lateral Non-uniform doping in High-Voltage MOSFETs
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June
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Y. S. Chauhan, F. Krummenacher, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "Compact Modeling of Lateral Non-uniform doping in High-Voltage MOSFETs," IEEE Transactions on Electron Devices, vol. 54, no. 6, pp. 1527-1539, June 2007.
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IEEE Transactions on Electron Devices
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Chauhan, Y.S.1
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11
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Inversion charge lineariazation in MOSFET modeling and rigorous derivation of the EKV compact model
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J.-M. Sallese, M. Bucher, F. Krummenacher, and P. Fazan, "Inversion charge lineariazation in MOSFET modeling and rigorous derivation of the EKV compact model," Solid-State Electronics, vol. 46, no. 11, pp. 677-683, April 2003.
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Solid-State Electronics
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0003742016
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Analytical MOS Transistor Modelling for Analog Circuit Simulation,
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Ph.D. dissertation, EPFL, thesis No. 2114
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M. Bucher, "Analytical MOS Transistor Modelling for Analog Circuit Simulation," Ph.D. dissertation, EPFL, 1999, thesis No. 2114.
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Bucher, M.1
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Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs, in IEEE International Electron Devices Meeting, Dec. 2006, pp. 8.3.1 -8.3.4.
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Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs," in IEEE International Electron Devices Meeting, Dec. 2006, pp. 8.3.1 -8.3.4.
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