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Volumn , Issue , 2008, Pages 119-124

Compact modeling of suspended gate FET

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; MESFET DEVICES; POWDERS;

EID: 47649132953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI.2008.11     Document Type: Conference Paper
Times cited : (8)

References (13)
  • 3
    • 33847746657 scopus 로고    scopus 로고
    • A new nanoelectro- mechanical field effect transistor (NEMFET) design for low-power electronics
    • Dec
    • H. Kam, D. Lee, R. Howe, and T-J. King, "A new nanoelectro- mechanical field effect transistor (NEMFET) design for low-power electronics," in IEEE International Electron Devices Meeting, Dec. 2005, pp. 463-466.
    • (2005) IEEE International Electron Devices Meeting , pp. 463-466
    • Kam, H.1    Lee, D.2    Howe, R.3    King, T.-J.4
  • 5
    • 33845576089 scopus 로고    scopus 로고
    • Principles of space-charge based bi-stable MEMS: The junction-MEMS
    • January
    • J.-M. Sallese and D. Bouvet, "Principles of space-charge based bi-stable MEMS: The junction-MEMS," Sensors and Actuators A: Physical, vol. 133, no. 1, pp. 173-179, January 2007.
    • (2007) Sensors and Actuators A: Physical , vol.133 , Issue.1 , pp. 173-179
    • Sallese, J.-M.1    Bouvet, D.2
  • 7
    • 34247859035 scopus 로고    scopus 로고
    • Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory
    • May
    • T. Nagami, H. Mizuta, N. Momo, Y. Tsuchiya, S. Saito, T. Arai, T. Shimada, and S. Oda, "Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory," IEEE Transactions on Electron Devices, vol. 54, no. 5, pp. 1132-1139, May 2007.
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.5 , pp. 1132-1139
    • Nagami, T.1    Mizuta, H.2    Momo, N.3    Tsuchiya, Y.4    Saito, S.5    Arai, T.6    Shimada, T.7    Oda, S.8
  • 8
    • 33947248679 scopus 로고    scopus 로고
    • 3-d design and analysis of functional nems-gate mosfets and sets
    • March
    • B. Pruvost, H. Mizuta, and S. Oda, "3-d design and analysis of functional nems-gate mosfets and sets," IEEE Transactions on Nanotechnology, vol. 6, no. 2, pp. 218-224, March 2007.
    • (2007) IEEE Transactions on Nanotechnology , vol.6 , Issue.2 , pp. 218-224
    • Pruvost, B.1    Mizuta, H.2    Oda, S.3
  • 11
    • 0037395540 scopus 로고    scopus 로고
    • Inversion charge lineariazation in MOSFET modeling and rigorous derivation of the EKV compact model
    • April
    • J.-M. Sallese, M. Bucher, F. Krummenacher, and P. Fazan, "Inversion charge lineariazation in MOSFET modeling and rigorous derivation of the EKV compact model," Solid-State Electronics, vol. 46, no. 11, pp. 677-683, April 2003.
    • (2003) Solid-State Electronics , vol.46 , Issue.11 , pp. 677-683
    • Sallese, J.-M.1    Bucher, M.2    Krummenacher, F.3    Fazan, P.4
  • 12
    • 0003742016 scopus 로고    scopus 로고
    • Analytical MOS Transistor Modelling for Analog Circuit Simulation,
    • Ph.D. dissertation, EPFL, thesis No. 2114
    • M. Bucher, "Analytical MOS Transistor Modelling for Analog Circuit Simulation," Ph.D. dissertation, EPFL, 1999, thesis No. 2114.
    • (1999)
    • Bucher, M.1
  • 13
    • 46049120054 scopus 로고    scopus 로고
    • Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs, in IEEE International Electron Devices Meeting, Dec. 2006, pp. 8.3.1 -8.3.4.
    • Y. S. Chauhan, F. Krummenacher, C. Anghel, R. Gillon, B. Bakeroot, M. Declercq, and A. M. Ionescu, "Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs," in IEEE International Electron Devices Meeting, Dec. 2006, pp. 8.3.1 -8.3.4.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.