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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

Epitaxial design of 475 nm InGaN laser diodes with reduced wavelength shift

(8) Queren, Désirée a Avramescu, Adrian a Schillgalies, Marc a Peter, Matthias a Meyer, Tobias a Brüderl, Georg a Lutgen, Stephan a Strauß, Uwe a

a OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN; BARRIER MATERIAL; CRYSTALLINE QUALITY; DOUBLE QUANTUM WELL STRUCTURES; GAN SUBSTRATE; INDIUM CONTENT; INGAN LASER DIODES; LASER DIODES; MATERIAL COMPOSITIONS; QUANTUM WELL; SINGLE QUANTUM WELL STRUCTURES; SLOPE EFFICIENCIES; WAVELENGTH SHIFT;

DEFECT DENSITY; DEFECTS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; QUANTUM WELL LASERS; SEMICONDUCTOR DEVICE STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79251617231 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200880783 Document Type: Article

Times cited : (16)

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6
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- D. Queren, M. Schillgalies, A. Avramescu, G. Brüderl, A. Laubsch, S. Lutgen, and U. Strauß, J. Cryst. Growth, to be published.
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- Queren, D.¹ Schillgalies, M.² Avramescu, A.³ Brüderl, G.⁴ Laubsch, A.⁵ Lutgen, S.⁶ Strauß, U.⁷

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- A. Avramescu, M. Schillgalies, D. Queren, S. Lutgen, G. Brüderl, and U. Strauß, ICMOVPE 2008.
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- Avramescu, A.¹ Schillgalies, M.² Queren, D.³ Lutgen, S.⁴ Brüderl, G.⁵ Strauß, U.⁶

8
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- Schillgalies, M.¹ Laubsch, A.² Lutgen, S.³ Avramescu, A.⁴ Brüderl, G.⁵ Queren, D.⁶ Strauß, U.⁷

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