Phonon-replica transitions in InGaN/GaN quantum well structures

Optical and Quantum Electronics

Volumn 34, Issue 12, 2002, Pages 1213-1219

  Feng, S W ^a   Tsai, C Y ^a,d   Cheng, Y C ^a   Liao, C C ^a   Yang, C C ^a   Lin, Y S ^b   Ma, K J ^b   Chyi, J I ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Indium rich clusters; InGaN GaN quantum well; Phonon replica transition

Indexed keywords

PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE;

GAUSSIAN DISTRIBUTIONS; PHONON-REPLICA TRANSITIONS; PHOTOLUMINESCENCE SPECTRUM; TEMPERATURE VARIATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036959338     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021382721938     Document Type: Article

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