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Volumn 30, Issue 4, 2011, Pages 574-583

Transient analysis of CMOS-gate-driven RLGC interconnects based on FDTD

Author keywords

Complementary metal oxide semiconductor (CMOS); device models; interconnect; multiconductor transmission lines; noise analysis; signal integrity; timing analysis

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEVICE MODELS; INTERCONNECT; MULTI-CONDUCTOR TRANSMISSION LINES; NOISE ANALYSIS; SIGNAL INTEGRITY; TIMING ANALYSIS;

EID: 79953117517     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2010.2095650     Document Type: Conference Paper
Times cited : (58)

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