Universal model for local anodic oxidation based on surface chemistry of oxide islands

Japanese Journal of Applied Physics

Volumn 50, Issue 3, 2011, Pages

  Nakamura, Masaya ^a   Ogino, Toshio ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM OXIDATION; ANODIC OXIDES; APPLIED VOLTAGES; BASE SURFACE; LOCAL ANODIC OXIDATION; NEW MODEL; OXIDE ISLANDS; OXIDE LAYER; OXIDE SURFACE; OXIDE THICKNESS; RE-OXIDATION; SI ATOMS; SI SURFACES; THERMAL-ANNEALING; UNIVERSAL MODEL;

ATOMIC FORCE MICROSCOPY; CHEMICAL PROPERTIES; HYDROPHILICITY; SILICON; SURFACE CHEMISTRY; SURFACES;

ANODIC OXIDATION;

EID: 79953085882     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.035202     Document Type: Article

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