Nanotribological properties of precision-controlled regular nanotexture on H-passivated Si surface by current-induced local anodic oxidation

Ultramicroscopy

Volumn 109, Issue 3, 2009, Pages 247-252

  Mo, Yufei ^a,b   Zhao, Wenjie ^a,b   Huang, Deming ^a,b   Zhao, Fei ^a,b   Bai, Mingwu ^a  

^a LANZHOU INSTITUTE OF CHEMICAL PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Atomic force microscopy; Local anodic oxidation; Nanotexture; Nanotribology

Indexed keywords

ATOMIC-FORCE MICROSCOPIES; COLLOIDAL PROBES; FRICTION FORCES; LOCAL ANODIC OXIDATION; LOW ADHESIONS; NANO-METER SCALE; NANO-SIZED; NANOTEXTURE; NANOTRIBOLOGICAL PROPERTIES; OPERATIONAL PARAMETERS; PULSE WIDTHS; PULSED BIAS VOLTAGES; RELATIVE HUMIDITIES; SI SURFACES;

ATMOSPHERIC HUMIDITY; ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; ATOMS; ELECTROCHEMICAL OXIDATION; MOS CAPACITORS; NANOTRIBOLOGY; OXIDATION; PASSIVATION; SILICON;

ANODIC OXIDATION;

EID: 59649091157     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2008.10.025     Document Type: Article

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