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Volumn 16, Issue 6, 1998, Pages 2952-2956

Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000229527     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590325     Document Type: Article
Times cited : (43)

References (30)
  • 23
    • 11744365827 scopus 로고    scopus 로고
    • note
    • 2), d is the linewidth (d = 60 nm), v is the tip scan speed during lithography (v is about 1 μm/s), q is the electron charge. The estimation gives I = 0.1 pA, value which is lower than the sensitivity of our I(V) instrumentation. This result is quite consistent with the value of the value of 0.05 pA measured at the very first stage of oxide formation (Ref. 18).
  • 25
    • 11744335348 scopus 로고
    • Ph.D. thesis, University of Marseilles, France
    • M. Commandré, Ph.D. thesis, University of Marseilles, France, 1981.
    • (1981)
    • Commandré, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.