Fabrication of nanopatterns on H-passivated Si surface by AFM local anodic oxidation

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 1, 2008, Pages 146-149

  Mo, Yufei ^a,b   Wang, Ying ^a,b   Bai, Mingwu ^a  

^a LANZHOU INSTITUTE OF CHEMICAL PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Atomic force microscopy; Local anodic oxidation; Nanopattern; Pulse bias voltage

Indexed keywords

ANODIC OXIDATION; ATMOSPHERIC HUMIDITY; ATOMIC FORCE MICROSCOPY; CHEMICAL OXYGEN DEMAND; ELECTROCHEMICAL OXIDATION; FABRICATION; MICROSCOPIC EXAMINATION; MOS CAPACITORS; OPTICAL DESIGN; OXIDATION; PASSIVATION; SCANNING PROBE MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SILICONES; SURFACES;

LOCAL ANODIC OXIDATION; NANO PATTERNING; NANO-PATTERNS; NANO-SIZED PATTERNS; NANOPATTERN; OPERATIONAL PARAMETERS; PULSE BIAS VOLTAGE; PULSE WIDTHS; PULSED BIAS VOLTAGE; RELATIVE HUMIDITIES; SI SURFACE; SOLUTION PROCESSING; VISIBLE-LIGHT;

IMAGING TECHNIQUES;

EID: 52949152376     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.06.015     Document Type: Article

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