Dry etching characteristics of HfAlO3 thin films in BCl 3/Ar plasma using inductively coupled plasma system

Vacuum

Volumn 85, Issue 10, 2011, Pages 932-937

  Ha, Tae Kyung ^a   Woo, Jong Chang ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Coatings; Etching; HfAlO3; High k; ICP; XPS

Indexed keywords

AR PLASMAS; CHEMICAL ETCHING; CHEMICAL STATE; DC BIAS VOLTAGE; ETCH PARAMETERS; ETCH RATES; ETCH SELECTIVITY; ETCHED SURFACE; ETCHING CHARACTERISTICS; GAS MIXING RATIO; HFALO3; HIGH-K; ICP; INDUCTIVELY-COUPLED; PROCESS PRESSURE; RF-POWER; XPS;

BIAS VOLTAGE; COATINGS; DC POWER TRANSMISSION; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; SILICON COMPOUNDS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY ETCHING;

EID: 79953040129     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.01.015     Document Type: Article

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