Effect of inert gas additive species on Cl2 high density plasma etching of compound semiconductors. Part II. InP, InSb, InGaP and InGaAs

Applied Surface Science

Volumn 147, Issue 1, 1999, Pages 215-221

  Hahn, Y B ^a   Hays, D C ^a   Cho, H ^a   Jung, K B ^a   Abernathy, C R ^a   Pearton, S J ^a   Shul, R J ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; HELIUM; MORPHOLOGY; PLASMA ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE ROUGHNESS; XENON;

INDUCTIVELY COUPLED PLASMA; SEMICONDUCTING INDIUM ANTIMONIDE; SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032631674     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00115-4     Document Type: Article

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