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Ferroelectrics

Volumn 357, Issue 1 PART 3, 2007, Pages 41-47

Etch properties of Hf-based high-K dielectrics using inductively coupled plasma

(4) Kim, Gwan Ha a Kim, Kyoung Tae a Woo, Jong Chang a Kim, Chang Il a

a Chung Ang University (South Korea)

Author keywords

Etching; HfO2; High k materials; Inductively coupled plasma; Quadrupole mass spectrometry

Indexed keywords

BROMINE OXIDE; CHEMICAL ETCHING; ENERGY DEPENDENCY; ETCH PROPERTIES; ETCH RATES; ETCHING CHARACTERISTICS; HFO2; HIGH-K DIELECTRIC; HIGH-K MATERIALS; INDUCTIVE COUPLED PLASMA; MASS SPECTRA; QUADRUPOLE MASS SPECTROMETRY; VOLATILE SPECIES;

BROMINE; CHLORINE COMPOUNDS; DIELECTRIC MATERIALS; ETCHING; FERROELECTRICITY; HAFNIUM; HAFNIUM COMPOUNDS; MASS SPECTROMETERS; MASS SPECTROMETRY; PHOTORESISTS; SEMICONDUCTING SILICON COMPOUNDS;

INDUCTIVELY COUPLED PLASMA;

EID: 75449114645 PISSN: 00150193 EISSN: 15635112 Source Type: Journal
DOI: 10.1080/00150190701527605 Document Type: Conference Paper

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.