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Volumn 47, Issue 8 PART 3, 2008, Pages 6960-6964

Etching characteristics of ZnO and Al-doped ZnO in inductively coupled Cl2/CH4/H2/Ar and BCl3/CH 4/H2/Ar plasmas

Author keywords

Al doped ZnO (AZO); Inductively coupled plasma (ICP); Plasma etching; TCO; ZnO

Indexed keywords

ALUMINUM; ARGON; ATOMIC SPECTROSCOPY; EMISSION SPECTROSCOPY; ETCHING; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; MOLECULAR SPECTROSCOPY; OPTICAL EMISSION SPECTROSCOPY; PHOTOELECTRON SPECTROSCOPY; PHOTORESISTS; PHYSICAL VAPOR DEPOSITION; PLASMA ETCHING; PLASMAS; PRASEODYMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC ALLOYS;

EID: 55149108321     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6960     Document Type: Article
Times cited : (14)

References (18)
  • 1
    • 0034251174 scopus 로고    scopus 로고
    • T. Minami: MRS Bull. 25 (2000) No. 8, 38.
    • (2000) MRS Bull , vol.25 , Issue.8 , pp. 38
    • Minami, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.