Inductively coupled plasma etching of GaN using Cl2/He gases

Materials Science and Engineering: B

Volumn 98, Issue 1, 2003, Pages 60-64

  Lin, Y C ^a   Chang, S J ^a   Su, Y K ^a   Shei, S C ^b   Hsu, S J ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b South Epitaxy Corporation   (Taiwan)

Author keywords

Etching rate; GaN; ICP; Specific contact resistance

Indexed keywords

ANISOTROPY; GALLIUM NITRIDE; GASES; ION BOMBARDMENT; OHMIC CONTACTS; PLASMA ETCHING;

CONTACT RESISTANCE;

MATERIALS SCIENCE;

EID: 0037465398     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00756-0     Document Type: Article

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