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Volumn 96, Issue 14, 2010, Pages

Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant

(8) Jo, Minseok a Kim, Seonghyun a Lee, Joonmyoung a Jung, Seungjae a Park, Ju Bong a Jung, Hyung Suk b Choi, Rino c Hwang, Hyunsang a

a Gwangju Institute of Science and Technology (GIST) (South Korea)

b SAMSUNG Electronics (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; ENERGY DISTRIBUTIONS; FAST CHARGES; FAST ELECTRONS; HIGH DIELECTRIC CONSTANTS; MEASUREMENT DELAYS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MOS-FET; N-CHANNEL; TRAP ENERGY LEVELS; TRAP-TO-BAND TUNNELING;

CHARGE TRAPPING; ELECTRON MOBILITY; ELECTRON MULTIPLIERS; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; SMELTING;

FIELD EFFECT TRANSISTORS;

EID: 77951168278 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3384999 Document Type: Article

Times cited : (10)

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