Evaluation and numerical simulations of gan hemts electrical degradation

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1021-1023

  Chini, Alessandro ^a   Di Lecce, Valerio ^a   Esposto, Michele ^a   Meneghesso, Gaudenzio ^b   Zanoni, Enrico ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Charge carrier processes; Modfets; Power semiconductor devices; Reliability; Simulation

Indexed keywords

ALGAN; BARRIER LAYERS; CHARGE CARRIER PROCESS; DC CHARACTERISTICS; DC STRESS; DEVICE DEGRADATION; DYNAMIC PERFORMANCE; ELECTRICAL DEGRADATION; EXPERIMENTAL MEASUREMENTS; GAN HEMTS; GATE EDGE; MODFETS; NUMERICAL SIMULATION; POWER SEMICONDUCTOR DEVICES; STATIC CHARACTERISTIC; TRAP CONCENTRATION; TRAPPING REGIONS;

CHARGE CARRIERS; COMPUTER SIMULATION; DEGRADATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES;

MATHEMATICAL MODELS;

EID: 72049105066     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2029875     Document Type: Article

References (9)

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