Device degradation phenomena in GaN HFET technology: Status, mechanisms, and opportunities

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Piner, E L ^a   Singhal, S ^a   Rajagopal, P ^a   Themen, R ^a   Roberts, J C ^a   Li, T ^a   Hanson, A W ^a   Johnson, J W ^a   Kizilyalli, I C ^a   Linthicum, K J ^a  

^a NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFET; AND GATES; BUFFER LEAKAGE; COMMERCIAL VIABILITY; CURRENT STATUS; DEVICE DEGRADATION; DEVICE STABILITY; GAN HFET; INDUSTRY STANDARDS; REMARKABLE PERFORMANCE;

DEGRADATION; ELECTRON DEVICES; GALLIUM ALLOYS; SEMICONDUCTING GALLIUM; STANDARDS; SULFATE MINERALS; TECHNOLOGY;

GALLIUM NITRIDE;

EID: 46049110769     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346798     Document Type: Conference Paper

References (19)

1. T. Kikkawa, T. Maniwa, H. Hayashi, M. Kanamura, S. Yokokawa, M. Nishi, et al, "An over 200-W output power GaN HEMT push-pull amplifier with high reliability," IEEE MTT-S Int. Microwave Symp. Digest, 2004, pp. 1347-1350.
2. R. Therrien, S. Singhal, J.W. Johnson, W. Nagy, R. Borges, A. Chaudhari, et al, "A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency," Electron Devices Meeting, 2005. IEDM Technical Digest, Dec. 5, 2005 pp. 568 - 571
3. A. Wakejima, K. Matsunaga, Y. Okamoto, Y. Ando, T. Nakayama, and H. Miyamoto, "370W output power GaN-FET amplifier for W-CDMA cellular base stations," Electron. Lett., 41(25), 2005, pp. 1371-1372.
4. H. Kim, V. Tilak, B.M. Green, J.A. Smart, W.J. Schaff, J.R. Shealy, and L.F. Eastman, "Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate," Phys. Stat. Sol. (a) 188(1), 2001, pp. 203-206.
5. S.H. Hsu, P. Valizadeh, D. Pavlidis, J.S Moon, M. Micovic, D. Wong, and T. Hussain, "Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs," IEEE GaAs IC Dig., Monterey, CA, USA, October 2002, pp. 85-88.
6. H. Kim, R.M Thompson, V. Tilak, T.R. Prunty, J.R. Shealy, and L.F. Eastman, "Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation," Electron Dev. Lett., 24(7), 2003, pp. 421-423.
7. H. Kim, V. Tilak, B.M. Green, J.A. Smart, W.J. Schaff, J.R. Shealy, and L.F. Eastman, "Degradation characteristics of AlGaN/GaN high electron mobility transistors," IEEE Rel. Phys. Symp., Orlando, FA, USA, 2001, pp. 214-218.
8. Y. Liu, J.A. Bardwell, S.P. McAlister, H. Tang, J.B. Webb, and T.W. MacElwee, "Bias stress measurements on high performance AlGaN/GaN HFET devices," Phys. Stat. Sol. (a) 188(1), 2001, pp. 233-237.
9. C. Lee, L. Witkowski, M. Muir, H.Q. Tserng, P. Saunier, H. Wang, J. Yang, and M.A. Khan, "Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrates," Proc. IEEE Lester Eastman Conf. on High Performance Devices, Newark, NJ, USA, 2002, pp. 436-442.
10. Y.C. Chou, D. Leung, I. Smorchkova, M. Wojtowicz, R. Grundbacher, L. Callejo, et al, "Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting," Microelectronics Reliability, 44, 2004, pp. 1033-1038.
11. C. Lee, L. Witkowski, H.-Q. Tserng, P. Saunier, R. Birkhahn, D. Olson, et al, "Effects of AlGaN/GaN HEMT structure on RF reliability," Electron. Lett., 41(3), 2005, pp.155-157.
12. 3 plasma treatment prior to SiN passivation," Electron Dev. Lett., 26(4), 2005, pp. 225-227.
13. S. Singhal, T. Li, A. Chaudhari, A.W. Hanson, R. Therrien, J.W. Johnson, et al., "Reliability of large periphery GaN-on-Si HFETs," Reliability of Compound Semiconductors, ROCS Workshop 2005 Proceedings, Palm Springs, CA, USA, 2005, pp. 135-149.
14. S. Singhal, T. Li, A. Chaudhari, A.W. Hanson, R. Therrien, J.W. Johnson, et al., "Reliability of large periphery GaN-on-Si HFEts," Microelectronics Reliability, 46, 2006, pp. 1247-1253.
15. S. Singhal, J.C. Roberts, P. Rajagopal, T. Li, A.W. Hanson, R. Therrien, et al., "GaN-on-Si failure mechanisms and reliability improvements," Tech Digest of Intl. Rel. Phys. Symp., 2006, pp. 95-98.
16. R. Coffie, Y.C. Chen, I. Smorchkova, M. Wojtowicz, Y.C. Chou, B. Heying, and A. Oki, "Impact of AlN interlayer on reliability of AlGaN/GaN HEMTs," Tech Digest of Intl. Rel. Phys. Symp., 2006, pp. 99-102.
17. M. Rosker, "Wide bandgap semiconductor devices and MMICs: A DARPA perspective," 2005 Intl. Conf. on Compound Semiconductor Manufacturing Technology, New Orleans, LA, USA. And accompanying presentation: http://www.darpa.mil/mto/rf/presentations/mantech.pdf.
18. S. Heikman, S. Keller, S.P. DenBaars, and U.K. Mishra, "Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition," Appl. Phys. Lett., 81(3), 2002, pp. 439-441.
19. Y.-F. Wu, A. Saxler, M. Moore, R.P. Smith, S. Sheppard, P.M. Chavarkar, et al, "30-W/mm GaN HEMTs by field plate optimization," Electron Device Lett., 25(3), 2004, pp. 117-119.