GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 372-378

  Döscher, Henning ^a   Möller, Kristof ^a   Hannappel, Thomas ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

A1. In situ monitoring; A1. Reflectance anisotropy spectroscopy; A1. Surface reconstruction; A3. Alternative process gas; B1. Gallium phosphide; B1. Indium phosphide

Indexed keywords

A1. REFLECTANCE ANISOTROPY SPECTROSCOPY; A1. SURFACE RECONSTRUCTION; A3. ALTERNATIVE PROCESS GAS; B1. GALLIUM PHOSPHIDE; B1. INDIUM PHOSPHIDE; IN-SITU MONITORING;

ANISOTROPY; CALCULATIONS; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM PHOSPHIDE; INDIUM; INDIUM PHOSPHIDE; METALLORGANIC VAPOR PHASE EPITAXY; MONITORING; NITROGEN; PHASE DIAGRAMS; REFLECTION; SEMICONDUCTING GALLIUM;

SURFACE RECONSTRUCTION;

EID: 79952739144     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.132     Document Type: Conference Paper

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