InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 6, 2008, Pages 254-256

  Szabo N ^a   Sagol B E ^a   Seidel, U ^a   Schwarzburg, K ^a   Hannappel, T ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; BAND GAPS; BULK MATERIALS; I - V CURVE; III-V SEMICONDUCTOR COMPOUNDS; IN0.53GA0.47AS; INP; INP SUBSTRATES; LATTICE-MATCHED; LOW BAND GAP; SEPARATE DEVICES; TANDEM CELLS; TIME-RESOLVED PHOTOLUMINESCENCE; TRIPLE JUNCTION SOLAR CELLS; WORLD RECORDS;

CONVERSION EFFICIENCY; ENERGY CONVERSION; ENERGY GAP; SOLAR CELLS; SOLAR ENERGY; TUNNEL DIODES;

SEMICONDUCTOR JUNCTIONS;

EID: 70449635731     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802141     Document Type: Article

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