Indirect in situ characterization of Si(1 0 0) substrates at the initial stage of IIIV heteroepitaxy

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 16-21

  Dscher, Henning ^a   Supplie, Oliver ^a   Brckner, Sebastian ^a   Hannappel, Thomas ^a   Beyer, Andreas ^b   Ohlmann, Jens ^b   Volz, Kerstin ^b  

^a HAHN MEITNER INSTITUT   (Germany)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

A1. In situ monitoring; A1. Reflectance anisotropy spectroscopy; A1. Si(100) surfacestructure; A1. Transmission electron microscopy; A3. Polar on non polarepitaxy; B1. Gallium phosphide

Indexed keywords

A1. REFLECTANCE ANISOTROPY SPECTROSCOPY; A1. TRANSMISSION ELECTRON MICROSCOPY; A3. POLAR ON NON-POLAREPITAXY; B1. GALLIUM PHOSPHIDE; IN-SITU MONITORING; SI(1 0 0);

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRONS; EPITAXIAL GROWTH; FILM PREPARATION; GALLIUM PHOSPHIDE; REFLECTION; SEMICONDUCTING GALLIUM; SILICON; SPECTRUM ANALYSIS; STRUCTURAL ANALYSIS; SURFACE RECONSTRUCTION; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 79551687319     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.08.017     Document Type: Article

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