The role of N2 and H2 as carrier gas on the selective area MOVPE of InP-based heterostructures using TBAs and TBP as group-V sources

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 37-40

  Zimmermann, G ^a   Ougazzaden, A ^a   Gloukhian, A ^a   Rao, E V K ^a   Delprat, D ^a   Ramdane, A ^a   Mircea, A ^a  

^a ORANGE LABS   (France)

Author keywords

Group V; H2 carrier gas; InP based materials; N2 carrier gas

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; HYDROGEN; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

CARRIER GAS;

HETEROJUNCTIONS;

EID: 0041763296     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01788-6     Document Type: Article

References (12)

1. R. Bhat, Journal of Crystal Growth, 120 (1992) 362.
2. G.B. Stringfellow, Organometallic vapour phase epitaxy: theory and practice, Academic Press, 1989.
3. Y. Sakata, T. Nakamura, S. Ae, T. Terakado, Y. Inomoto, T. Torikai and H. Hasumi, Proc. 7th Int. Conf. on InP & Rel. compounds, Sapporo, Japan, 1995, p. 839.
4. H. Hardtdegen and P. Giannoules, III-Vs Review, 8 (3) (1995) 34.
5. G. Zimmermann, A. Ougazzaden and A. Mircea, J. Cryst. Growth, 170 (1991) 645.
6. T. Sasaki, M. Kitamura and I. Mito, J. Cryst. Growth, 132 (1993) 435.
7. T. Fujii, M. Ekawa and S. Yamazaki, J. Cryst. Growth, 156 (1995) 59.
8. Y.D. Galeuchet and P. Roentgen, J. Cryst. Growth, 107 (1991) 147.
9. M. Gibbon, J.P. Stagg, C.G. Cureton, E.J. Thrush, C.J. Jones, R.E. Mallard, R.E. Pritchard, N. Collins and A. Chew, Semicond. Sci. Technol., 8 (1993) 998.
10. C. Caneau, R. Bhat, M.R. Frei, C.C. Chang, R.J. Deri and M.A. Koza, J. Cryst. Growth, 24 (1992) 243.
11. A. Mircea, R. Mellet, B. Rose, P. Dasté and G. Schiavini, J. Cryst. Growth, 77 (1986) 340.
12. K. Yamaguchi and K. Okamoto, Jpn. J. Appl. Phys., 32 (1993) 1523.