Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques

Review of Scientific Instruments

Volumn 75, Issue 5 PART 1, 2004, Pages 1297-1304

  Hannappel, T ^a   Visbeck, S ^a   Toben L ^a   Willig, F ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CONTAMINATION; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; KINETIC ENERGY; LOW ENERGY ELECTRON DIFFRACTION; PARTIAL PRESSURE; REFLECTION; RELIABILITY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA; TRANSPORT PROPERTIES; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) REACTORS; REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS); THERMAL DESORPTION; TRANSFER SYSTEMS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 3042684637     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1711148     Document Type: Article

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