On the AlAs/GaAs (001) interface dielectric anisotropy

Thin Solid Films

Volumn 472, Issue 1-2, 2005, Pages 261-269

  Hunderi, O ^a   Zettler, J T ^b   Haberland, K ^b,c  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b LayTec GmbH   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

III V semiconductor interfaces and surfaces; Interface dielectric anisotropy; Reflectance anisotropy spectroscopy

Indexed keywords

ALGORITHMS; ALUMINUM COMPOUNDS; ANISOTROPY; SANDWICH STRUCTURES; SEMICONDUCTOR DEVICES; SPECTROSCOPY; THIN FILMS;

III-V SEMICONDUCTOR INTERFACES AND SURFACES; INTERFACE DIELECTRIC ANISOTROPY; MOLECULAR BEAM EPITAXY (MBE); REFLECTANCE ANISOTROPY SPECTROSCOPY;

DIELECTRIC PROPERTIES;

EID: 9944246012     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.150     Document Type: Article

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