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Volumn 93, Issue 17, 2008, Pages
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In situ verification of single-domain III-V on Si(100) growth via metal-organic vapor phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC PHYSICS;
CRYSTAL GROWTH;
GALLIUM ALLOYS;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
VAPORS;
ANTIPHASE DOMAINS;
ATOMIC FORCES;
DO-MAINS;
DOMAIN DISTRIBUTIONS;
EX-SITU;
IN-SITU;
PEAK INTENSITIES;
REFLECTANCE ANISOTROPY SPECTROSCOPIES;
SI (100) SUBSTRATES;
SI(100);
SURFACE STEPS;
METALLORGANIC VAPOR PHASE EPITAXY;
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EID: 55149087730
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3009570 Document Type: Article |
Times cited : (55)
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References (13)
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