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Volumn 30, Issue 11, 2001, Pages 1425-1428

In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

Author keywords

Gallium phosphide (GaP); Indium phosphide (InP); Metal organic vapor phase epitaxy (MOVPE); Optical in situ spectroscopy; Reflectance difference anisotropy spectroscopy (RDS RAS); Surface reconstruction; Ultra high vacuum (UHV)

Indexed keywords

ANISOTROPY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS; ULTRAHIGH VACUUM;

EID: 0035517114     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0196-7     Document Type: Article
Times cited : (30)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.