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Volumn 30, Issue 11, 2001, Pages 1425-1428
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In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K
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Author keywords
Gallium phosphide (GaP); Indium phosphide (InP); Metal organic vapor phase epitaxy (MOVPE); Optical in situ spectroscopy; Reflectance difference anisotropy spectroscopy (RDS RAS); Surface reconstruction; Ultra high vacuum (UHV)
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Indexed keywords
ANISOTROPY;
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SPECTROSCOPIC ANALYSIS;
ULTRAHIGH VACUUM;
REFLECTANCE DIFFERENCE SPECTROSCOPY (RDS);
SURFACE RECONSTRUCTION;
INTERFACES (MATERIALS);
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EID: 0035517114
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-001-0196-7 Document Type: Article |
Times cited : (30)
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References (19)
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