Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N2 ambient

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6162-6165

  Keiper, Dietmar ^a   Velling, Peter ^b   Prost, Werner ^b   Agethen, Michael ^b   Tegude, Franz Josef ^b   Landgren, Gunnar ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

TERTIARYBUTYLARSINES; TERTIARYBUTYLPHOSPHINES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034314782     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6162     Document Type: Article

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