Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 196-199

  Trauwaert, M A ^a   Vanhellemont, J ^a   Maes, H E ^a   Van Bavel, A M ^b   Langouche, G ^b   Stesmans, A ^b   Clauws, P ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

Carbon; Oxygen; Silicon

Indexed keywords

EID: 0001594732     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01269-9     Document Type: Article

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