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Volumn 94, Issue 4, 2009, Pages 905-910
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Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
CLARIFICATION;
COOLING;
DOPING (ADDITIVES);
GERMANIUM;
NONMETALS;
NUCLEATION;
OXYGEN;
PRECIPITATION (CHEMICAL);
RAPID THERMAL PROCESSING;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SILICON WAFERS;
VACANCIES;
CONVENTIONAL FURNACES;
CRITICAL RADIUS;
CZOCHRALSKI SILICONS;
DENUDED ZONES;
GERMANIUM DOPING;
HETEROGENEOUS NUCLEATIONS;
HIGH TEMPERATURES;
INTERNAL GETTERING;
LOW HIGHS;
OXYGEN PRECIPITATES;
OXYGEN PRECIPITATIONS;
PRE TREATMENTS;
RAPID COOLING;
RAPID THERMAL ANNEAL;
SI WAFERS;
VACANCY COMPLEXES;
VACANCY CONCENTRATIONS;
OXYGEN VACANCIES;
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EID: 59649130492
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s00339-008-4847-x Document Type: Article |
Times cited : (8)
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References (21)
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