Electrical conduction at low temperatures in high energy silicon detectors before and after irradiation with neutrons

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 114, Issue 1-2, 1996, Pages 120-124

  Croitoru, N ^a,b   Rancoita, P G ^a   Rattaggi, M ^a   Rossi, G ^a   Seidman, A ^a,b  

^a INFN SEZIONE DI MILANO   (Italy)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; DETECTORS; EXPERIMENTS; IRRADIATION; LOW TEMPERATURE PROPERTIES; NEUTRONS; SILICON;

ELECTRICAL CONDUCTION; HIGH ENERGY SILICON DETECTORS;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 0030564051     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00204-2     Document Type: Article

References (35)

1. M. Bosetti, N. Croitoru, C. Furetta, C. Leroy, S. Pensotti, P.G. Rancoita, M. Rattaggi, M. Redaelli and A. Seidman, Nucl. Instr. and Meth. B 95 (1995) 219.
2. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1994) 435.
3. E. Fretwurst, H. Herdan, G. Lindstrom, U. Pein, M. Rollwagen, H. Schatz, P. Thomson and R. Wunstorf, Nucl. Instr. and Meth. A 288 (1990) 1.
4. Z. Li and H.W. Kraner, IEEE Trans. Nucl. Sci. 38 (1991) 244.
5. Z. Li and H.W. Kraner, Nucl. Instr. and Meth. A 308 (1991) 585.
6. N. Croitoru, A. Gambirasio, P.C. Rancoita and A. Seidman, to be published.
7. A.K. Jonscher, British J. Appl. Phys. 12 (1961) 363.
8. J.M. Brown and A.G. Jordan, J. Appl. Phys. 37 (1966) 337.
9. G.H. Dohler and H. Heyszenau, Phys Rev. B 12 (1975) 641.
10. T. Cavicchi and N.M. Haegel, Phys Rev. Lett. 63 (1989) 195.
11. S. Denda and M.A. Nicolet, J. Appl. Phys. 37 (1966) 2412.
12. R. Divakaruni, V. Prabharkar and C.R. Viswanathan, IEEE Trans. ED 41 (1994) 1405.
13. A.J. Joseph, J.D. Cressler and D.M. Richey, IEEE Trans. ED 16 (1995) 268.
14. D.M. Richey, J.D. Cressler and R.C. Jaeger, J. de Phys. IV 4 (1994) 127.
15. C.R. Viswanathan, R. Divakaruni and J. Kizziar, IEEE Trans. ED Lett. 12 (1991) 503.
16. R. Sing and B.J. Baliga, Solid State Electron. 37 (1994) 1933.
17. S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) pp. 22-29.
18. M.S. Tyagi, Introduction to Semiconductor Materials and Devices, (Wiley, New York, 1991) pp. 90-95.
19. M.A. Lampert, Phys. Rev, 125 (1962) 126.
20. J.L. Wagner and Milnes, Appl. Phys. Lett. 5 (1964) 181.
21. J.C. Manifacier and H.K. Henisch, Phys. Rev, B 17 (1978) 2648.
22. J.C.S. Woo, Plumer and J.M.C. Stork, IEEE Trans. ED 34 (1987) 130.
23. C.T. Sah, R.N. Noyce and W. Shockley, Pro. IRE 45 (1957) 1228.
24. K.L. Ashley and A.G. Milnes, J. Appl. Phys. 35 (1964) 369.
25. R. Wunstorf, M. Benkart, N. Claussen, N. Croitoru, E. Fretwurst, G. Lindstrom and T. Schultx, Nucl. Instr. and Meth. A 315 (1992) 149.
26. R. Wunstorf et al., Nucl. Phys. B (Proc. Suppl.) 23 A (1991) 324.
27. L. Tulach, H. Frank, B. Sopko and Z. Prasil, Phys. Sat. Sol. (a) 100 (1987) K13.
28. I. Tsveybak, W. Bugg, J.A. Harwy and J. Walter, IEEE Trans. Nucl. Sci. 39 (1992) 1720.
29. Ch. Li and Z. Li, Nucl. Instr. and Meth. A 342 (1994) 137.
30. R. Darvas, M. Mudrik, A. Seidman, M. Zilberstein and N. Croitoru, J. Appl. Phys. 71 (1992) 1517.
31. M. Bosetti et al., Nucl. Instr. and Meth. A 361 (1995) 461.
32. M. Borchi, C. Bertrand, C. Leroy, M. Bruzzi, C. Furetta, R. Poludetto, P.G. Rancoita, L. Wismara and P. Giubellino, Nucl. Instr. and Meth. A 279 (1989) 277.
33. M.A. Lampert and P. Mark, Current Injection in Solids (Academic Press, New York, 1970) pp. 293-305.
34. B.K. Ridley, Proc. Phys. Soc. 82 (1963) 954.
35. S.K. Ghandi, Semiconductor Power Devices (Wiley, New York, 1977) pp. 14-23.