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Electrochemical and Solid-State Letters

Volumn 14, Issue 5, 2011, Pages

Atomic layer deposition of p-type phosphorus-doped zinc oxide films using diethylzinc, ozone and trimethylphosphite

(4) Yuan, Hai a,b,c Luo, Bing b Campbell, Stephen A c Gladfelter, Wayne L b

a NORTHWESTERN POLYTECHNICAL UNIVERSITY (China)

b UNIVERSITY OF MINNESOTA (United States)

c University of Minnesota (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED FILMS; DIETHYLZINC; ELECTRICAL BEHAVIORS; OXIDATION STATE; P-TYPE; PHOSPHORUS ATOM; PHOSPHORUS CONCENTRATION; PHOSPHORUS-DOPED; POLYCRYSTALLINE FILM; ZINC IONS;

ATOMIC LAYER DEPOSITION; ATOMS; OZONE; PHOSPHORUS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79952492681 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3537326 Document Type: Article

Times cited : (17)

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