Mechanism of p-type conductivity for phosphorus-doped ZnO thin film

Journal of Physics D: Applied Physics

Volumn 42, Issue 1, 2009, Pages

  Yao, B ^a,b   Xie, Y P ^a   Cong, C X ^a   Zhao, H J ^a   Sui, Y R ^a   Yang, T ^a   He, Q ^a  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR COMPLEXES; AIR AMBIENT; NEUTRAL ACCEPTOR BOUND EXCITONS; P -TYPE CONDUCTIVITIES; P TYPES; P-O BONDS; PHOSPHORUS-DOPED; PHOTOLUMINESCENCE SPECTRUM; PURE ZNO; QUARTZ SUBSTRATES; ZINC PHOSPHATE GLASS; ZNO;

BINDING ENERGY; EMISSION SPECTROSCOPY; METALLIC FILMS; OXIDE MINERALS; PHOSPHORUS; QUARTZ; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

ZINC;

EID: 63749112761     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/1/015407     Document Type: Article

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