Study of microstructural evolutions in phosphorus-doped ZnO films grown by pulsed laser deposition

Journal of Crystal Growth

Volumn 311, Issue 11, 2009, Pages 3143-3146

  Jang, J H ^a   Kim, H S ^b   Norton, D P ^a   Craciun, V ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

A1. Characterization; A1. X ray diffraction; A3. Pulsed laser deposition; B2. Semiconducting II IV materials

Indexed keywords

A1. CHARACTERIZATION; A1. X-RAY DIFFRACTION; A3. PULSED LASER DEPOSITION; AS-GROWN FILMS; ATOMIC PERCENT; B2. SEMICONDUCTING II-IV MATERIALS; C-PLANE SAPPHIRE SUBSTRATES; CRYSTALLINE QUALITY; IN-PLANE ORIENTATION; LOW ANGLE GRAIN BOUNDARIES; MICRO-STRAIN; P-DOPED ZNO; PHOSPHORUS-DOPED; THREADING DISLOCATION; X RAY DIFFRACTION LINE PROFILE ANALYSIS; XRD; ZNO FILMS;

CORUNDUM; DIFFRACTION; DOPING (ADDITIVES); GRAIN BOUNDARIES; LASERS; METALLIC FILMS; PHOSPHORUS; PULSED LASER DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 65849384540     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.019     Document Type: Article

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