Properties of p-type and n-type ZnO influenced by P concentration

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Hu, Guangxia ^a   Gong, Hao ^a   Chor, E F ^a   Wu, Ping ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ENERGY GAP; PHOSPHORUS; ULTRAVIOLET SPECTROPHOTOMETERS;

BAND GAP ENERGY; LATTICE SPACING; OPTICAL BAND GAP; REDSHIFT;

ZINC OXIDE;

EID: 33845943697     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2408652     Document Type: Article

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