Step bunching and step "rotation" in homoepitaxial growth of Si on Si(110)-16 × 2

Surface Science

Volumn 605, Issue 7-8, 2011, Pages 838-843

  Alguno, Arnold ^a   Filimonov, Sergey N ^a,b   Suemitsu, Maki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

Models of surface kinetics; Molecular beam epitaxy; Monte Carlo simulations; Silicon; Step formation and bunching; Surface diffusion; Surface relaxation and reconstruction; Vicinal single crystal surfaces

Indexed keywords

MODELS OF SURFACE KINETICS; MONTE CARLO SIMULATIONS; STEP FORMATION AND BUNCHING; SURFACE RELAXATION AND RECONSTRUCTION; VICINAL SINGLE CRYSTAL SURFACE;

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC FIELDS; EPITAXIAL GROWTH; GROWTH KINETICS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOCRYSTALLINE SILICON; MONTE CARLO METHODS; ROTATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SINGLE CRYSTAL SURFACES; SURFACE DIFFUSION; SURFACE RELAXATION;

SURFACE RECONSTRUCTION;

EID: 79952361636     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2011.01.029     Document Type: Article

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