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Volumn 365, Issue 3, 1996, Pages 807-816
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The structure of clean and SiGe-covered Si(110) surfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER ELECTRON SPECTROSCOPY;
CRYSTAL GROWTH;
GERMANIUM;
LOW ENERGY ELECTRON DIFFRACTION;
MONOLAYERS;
PHASE SHIFT;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
STATISTICAL MECHANICS;
SILICON GERMANIDE;
STATISTICAL FLUCTUATION;
TERRACE STRUCTURE;
SURFACE STRUCTURE;
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EID: 0030269650
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00709-1 Document Type: Article |
Times cited : (12)
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References (18)
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