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Volumn 365, Issue 3, 1996, Pages 807-816

The structure of clean and SiGe-covered Si(110) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; GERMANIUM; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; PHASE SHIFT; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; STATISTICAL MECHANICS;

EID: 0030269650     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00709-1     Document Type: Article
Times cited : (12)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.