Influence of Si deposition on the electromigration induced step bunching instability on Si(1 1 1)

Surface Science

Volumn 575, Issue 1-2, 2005, Pages

  Gibbons, B J ^a   Noffsinger, J ^a,b   Pelz, J P ^a  

^a OHIO STATE UNIVERSITY   (United States)

^b UNIVERSITY OF KANSAS   (United States)

Author keywords

Atomic force microscopy; Diffusion and migration; Evaporation and sublimation; Growth; Step formation and bunching; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); ELECTROMIGRATION; EPITAXIAL GROWTH; GROWTH (MATERIALS); MORPHOLOGY; SUBLIMATION; SURFACES; THERMAL EFFECTS;

DIFFUSION AND MIGRATION; EVAPORATION AND SUBLIMATION; STEP FORMATION AND BUNCHING; SURFACE DIFFUSION; SURFACE SCIENCE;

SURFACE PHENOMENA;

EID: 12244312531     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.11.020     Document Type: Article

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