In situ STM observations of ordering behaviors on Ge(1 1 0) surfaces and atomic geometry of the Ge{17 15 1} facet

Surface Science

Volumn 560, Issue 1-3, 2004, Pages 213-225

  Ichikawa, Toshihiro ^a  

^a MEIJI UNIVERSITY   (Japan)

Author keywords

Computer simulations; Density functional calculations; Germanium; Low index single crystal surfaces; Scanning tunneling microscopy; Surface relaxation and reconstruction

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ELECTRON BEAMS; ELECTRON REFLECTION; GERMANIUM; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS;

ADATOMS; ATOMIC GEOMETRY; DENSITY FUNCTION CALCULATIONS; LOW INDEX SINGLE CRYSTAL SURFACES; REFLECTION ELECTRON MICROSCOPE (REM); SURFACE RELAXATION AND RECONSTRUCTION;

SURFACE PROPERTIES;

EID: 2942648637     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.04.050     Document Type: Article

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