"Rotating" steps in Si(0 0 1) homoepitaxy

Surface Science

Volumn 549, Issue 1, 2004, Pages 31-36

  Filimonov, S N ^a,b   Voigtlander B ^b  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Computer simulations; Faceting; Models of surface kinetics; Molecular beam epitaxy; Scanning tunneling microscopy

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; DIFFUSION; DIMERS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY;

FACETING; KINETIC INSTABILITY;

SILICON;

EID: 0346973268     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.11.033     Document Type: Article

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