Effects of annealing gas (N2, N2O, O2) on the characteristics of ZrSixOy/ZrO2 high-k gate oxide in MOS devices

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 522-525

  Kim, H D ^a   Jeong, S W ^a   You, M T ^a   Roh, Y ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

High k; Interfacial layer; ZrO2; ZrSixOy

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; OXIDATION; SILICON; SUBSTRATES; ZIRCONIUM COMPOUNDS;

EQUIVALENT OXIDE THICKNESS (EOT); HIGH-K; INTERFACIAL LAYER; SILICATE FILM;

MOS DEVICES;

EID: 33748743891     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.287     Document Type: Article

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