High-k dielectric oxides obtained by PLD as solution for gates dielectric in MOS devices

Applied Surface Science

Volumn 253, Issue 19, 2007, Pages 8184-8191

  Filipescu, M ^a   Scarisoreanu, N ^a   Craciun, V ^a,b   Mitu, B ^a   Purice, A ^a   Moldovan, A ^a   Ion, V ^a   Toma, O ^c   Dinescu, M ^a  

^a NATIONAL INSTITUTE FOR LASER   (Romania)

^b Major Analytical Instrumentation Center   (United States)

^c UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

Atomic force microscopy; HfO 2; HfSi x O y; Leakage current; Pulsed laser deposition; ZrO 2; ZrSi x O y

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; LASER ABLATION; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; SILICON; THIN FILMS; WAVELENGTH; X RAY DIFFRACTION; ZIRCONIA;

DIELECTRIC OXIDES; HAFNIUM SILICATE; ZIRCONIUM SILICATE;

MOS DEVICES;

EID: 34447319928     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.02.166     Document Type: Article

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