Stress distribution under electroless nickel bumps extracted using arrays of 7x7 piezo-FETs

Proceedings of IEEE Sensors

Volumn , Issue , 2010, Pages 2573-2576

  Lemke, Benjamin ^a   Baskaran, Rajashree ^b   Ganapathysubramanian, Shankar ^b   Paul, Oliver ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; DEPOSITION TEMPERATURES; ELECTROLESS NI; ELECTROLESS NICKEL; HIGH-DENSITY ARRAYS; IN-PLANE NORMAL STRESS; IN-PLANE SHEAR; IN-SITU MONITORING; MECHANICAL STRESS; P-TYPE; PIEZO-FET; PIEZO-RESISTIVE; PRE-DEPOSITION; STRESS COMPONENT; STRESS DISTRIBUTION; STRESS REDISTRIBUTION; STRESS SENSOR; STRESS-FREE STATE; STRESS-INDUCED; TYPICAL VALUES;

FIELD EFFECT TRANSISTORS; MESFET DEVICES; PASSIVATION; STRESS CONCENTRATION;

SENSORS;

EID: 79951863236     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2010.5690152     Document Type: Conference Paper

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