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Volumn , Issue , 2003, Pages 490-493

A novel stress sensor based on the transverse pseudo-Hall effect of MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; LOAD TESTING; MICROSENSORS; OPTICAL MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SENSITIVITY ANALYSIS; STRESSES;

EID: 0037480236     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (23)

References (9)
  • 1
    • 0035445467 scopus 로고    scopus 로고
    • Piezoresistive characteristics of short-channel MOSFETs on (100) silicon
    • A.T. Bradley, R.C. Jaeger, J.C. Suhling, K.J. O'Connor, "Piezoresistive Characteristics of Short-Channel MOSFETs on (100) Silicon", IEEE Trans. Electron Devices, vol. 48, no. 9 (2001), pp. 2009-2015
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.9 , pp. 2009-2015
    • Bradley, A.T.1    Jaeger, R.C.2    Suhling, J.C.3    O'Connor, K.J.4
  • 3
    • 0003503829 scopus 로고    scopus 로고
    • Microelectronic bonding process monitoring by integrated sensors
    • PhD Thesis no. 13685, ETH Zürich
    • M. Mayer, "Microelectronic Bonding Process Monitoring by Integrated Sensors", PhD Thesis no. 13685, ETH Zürich (2000)
    • (2000)
    • Mayer, M.1
  • 4
    • 0032002191 scopus 로고    scopus 로고
    • Stress-sensitive differential amplifiers using piezoresistive effects of MOSFETs and application to the three-axial accelerometer
    • H. Takao, Y. Matsumoto, M. Ishida, "Stress-Sensitive Differential Amplifiers Using Piezoresistive Effects of MOSFETs and Application to the Three-Axial Accelerometer", Sens. Actuators, vol. A65 (1998), pp. 61-68
    • (1998) Sens. Actuators , vol.A65 , pp. 61-68
    • Takao, H.1    Matsumoto, Y.2    Ishida, M.3
  • 6
    • 0003920493 scopus 로고
    • Hall effect devices
    • Adam Hilger New York
    • R.S. Popovic, "Hall Effect Devices", Adam Hilger New York (1991), p. 111
    • (1991) , pp. 111
    • Popovic, R.S.1
  • 7
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • C.S. Smith, "Piezoresistance Effect in Germanium and Silicon", Phys. Rev., vol. 94 ( 1954), pp. 42-49
    • (1954) Phys. Rev. , vol.94 , pp. 42-49
    • Smith, C.S.1
  • 8
    • 0001477655 scopus 로고
    • Piezoresistive properties of silicon diffused layers
    • O.N. Tufte, E.L. Stelzer, "Piezoresistive Properties of Silicon Diffused Layers", Phys. Rev., vol. 133, no. 6a (1964), pp. 1705-1716
    • (1964) Phys. Rev. , vol.133 , Issue.6 a , pp. 1705-1716
    • Tufte, O.N.1    Stelzer, E.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.