메뉴 건너뛰기




Volumn 1, Issue , 2005, Pages 321-324

Novel highly miniaturized multi-stress sensor field effect transistor with eight source/drain terminals

Author keywords

Discrete spinning current method; Piezo FET; Piezoresistance; Stress sensor; Stress sensor arrays

Indexed keywords

DISCRETE SPINNING CURRENT METHOD; PIEZO-FET; PIEZORESISTANCE; STRESS SENSOR ARRAYS; STRESS SENSORS;

EID: 27544509486     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2005.1496421     Document Type: Conference Paper
Times cited : (13)

References (7)
  • 1
    • 3042696929 scopus 로고    scopus 로고
    • Two-dimensional high density piezo-FET stress sensor arrays for in-situ monitoring of wire bonding processes
    • M. Doelle, C. Peters, P. Gieschke, P. Ruther, and O. Paul, "Two-Dimensional High Density Piezo-FET Stress Sensor Arrays for In-Situ Monitoring of Wire Bonding Processes," in Tech. Digest IEEE MEMS Conference, 2004, pp. 829-832.
    • (2004) Tech. Digest IEEE MEMS Conference , pp. 829-832
    • Doelle, M.1    Peters, C.2    Gieschke, P.3    Ruther, P.4    Paul, O.5
  • 2
    • 0034467107 scopus 로고    scopus 로고
    • A traction stress sensor array for use in high-resolution robotic tactile imaging
    • B.J. Kane, M.R. Cutkosky, and G.T.A. Kovacs, "A traction stress sensor array for use in high-resolution robotic tactile imaging," J. Microelectromech. Syst., vol. 9, no. 4, pp. 425-434, 2000.
    • (2000) J. Microelectromech. Syst. , vol.9 , Issue.4 , pp. 425-434
    • Kane, B.J.1    Cutkosky, M.R.2    Kovacs, G.T.A.3
  • 3
    • 0037480236 scopus 로고    scopus 로고
    • A novel stress sensor based on the transverse pseudo-hall effect of MOSFETs
    • M. Doelle, P. Ruther, and O. Paul, "A Novel Stress Sensor Based on the Transverse Pseudo-Hall Effect of MOSFETs," in Proc. IEEE MEMS Conference, 2003, pp. 490-493.
    • (2003) Proc. IEEE MEMS Conference , pp. 490-493
    • Doelle, M.1    Ruther, P.2    Paul, O.3
  • 4
    • 0035445467 scopus 로고    scopus 로고
    • Piezoresistive characteristics of short-channel MOSFETs on (100) silicon
    • Sept.
    • A.T. Bradley, R.C. Jaeger, J.C. Suhling, and K.J. O'Connor, "Piezoresistive characteristics of short-channel MOSFETs on (100) silicon," IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 2009-2015, Sept. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , Issue.9 , pp. 2009-2015
    • Bradley, A.T.1    Jaeger, R.C.2    Suhling, J.C.3    O'Connor, K.J.4
  • 6
    • 4243892466 scopus 로고
    • Many-valley interactions in N-type silicon inversion layers
    • G. Dorda, I. Eisele, and H. Gesch, "Many-Valley Interactions in N-Type Silicon Inversion Layers," Phys. Rev. B, vol. 17, no. 4, pp. 1785-1798, 1978.
    • (1978) Phys. Rev. B , vol.17 , Issue.4 , pp. 1785-1798
    • Dorda, G.1    Eisele, I.2    Gesch, H.3
  • 7
    • 26844561670 scopus 로고    scopus 로고
    • Geometry dependent sensitivity of planar piezoresistive stress sensors based on the pseudo-hall effect
    • M. Doelle, D. Mager, P. Ruther, and O. Paul, "Geometry Dependent Sensitivity of Planar Piezoresistive Stress Sensors Based on the Pseudo-Hall Effect," in Tech. Digest IEEE MEMS Conference, 2005, pp. 267-270.
    • (2005) Tech. Digest IEEE MEMS Conference , pp. 267-270
    • Doelle, M.1    Mager, D.2    Ruther, P.3    Paul, O.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.