Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 585-591

  Schmidt, Jan ^a   Kerr, Mark ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; NITROGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILANES; SILICON NITRIDE; STOICHIOMETRY; THIN FILMS;

SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

SILICON SOLAR CELLS;

EID: 0035199111     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00145-8     Document Type: Article

References (10)

1. Aberle A.G., Hezel R. Progress in Photovoltaics. 5:1997;29.
2. Leguijt C., Lölgen P., Eikelboom J.A., Weeber A.W., Schuurmans F.M., Sinke W.C., Alkemade P.F.A., Sarro P.M., Maree C.H.M., Verhoef L.A. Sol. Energy Mater. Sol. Cells. 40:1996;297.
3. J. Schmidt, T. Lauinger, A.G. Aberle, R. Hezel, Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington, 1996, IEEE, Piscataway, NJ, 1996, p. 413.
4. T. Lauinger, A.G. Aberle, R. Hezel, Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, 1997, Stephens, Bedford, 1997, p. 853.
5. Lauinger T., Moschner J., Aberle A.G., Hezel R. J. Vac. Sci. Technol. A. 16:1998;530.
6. Schmidt J., Aberle A.G. J. Appl. Phys. 85:1999;3626.
7. A. Hübner, A.G. Aberle, R. Hezel, Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, 1997, Stephens, Bedford, 1997, p. 92.
8. Sinton R.A., Cuevas A. Appl. Phys. Lett. 69:1996;2510.
9. Nagel H., Berge C., Aberle A.G. J. Appl. Phys. 86:1999;6218.
10. Schmidt J., Aberle A.G. J. Appl. Phys. 81:1997;6186.